Справочник электронных компонентов

Транзистор CHT2312GP

CHT2312GP - Транзистор полевой MOSFET структуры N

Основные характеристики:

Транзистор CHT2312GP можно заменить на:

НАЗВАНИЕ ТИП СТР. Pd, Вт Vds, В Vgs, В Vgsth, В Id, А Rds, Ом Qg, нКл Tr, нС Ci, пФ Tj, гр.Ц КОРПУС
AM1432NE SMD N 1.56 30 20 1 5.7 0.033 4 10 - 150 SC-70
AM2330NE SMD N 1.3 30 20 1 5.2 0.032 4 5 - 150 SOT-23
AM2344N SMD N 1.3 40 20 1 5.8 0.026 9.9 5 - 150 SOT-23
AM2362N SMD N 1.3 60 20 1 5.7 0.027 9 6 84 150 SOT-23
AM3412N SMD N 1.3 30 20 1 6.3 0.027 3.4 5 54 150 TSOP-6
AM3438NE SMD N 1.6 30 20 1 6.3 0.027 9 10 - 150 TSOP-6
AM3444N SMD N 2 40 20 1 6.5 0.032 3.4 7 42 150 TSOP-6
AM3456NE SMD N 2 30 20 1 5.5 0.032 4 10 - 150 TSOP-6
AM3460N SMD N 2 60 20 1 7.1 0.027 9 6 - 150 TSOP-6
AM4404N SMD N 3.1 30 20 1 16 0.0085 10 6 159 150 SO-8
AM4424N SMD N 3.1 20 8 1 9.7 0.022 5.5 9 - 150 SOIC-8
AM6612N SMD N 3.1 30 20 1 9.7 0.022 4 6 56 150 SO-8
AM6612NE SMD N 3.1 30 20 1 9.4 0.022 4 5 - 150 SOIC-8
AM7308NA SMD N 3.5 30 20 1 17 0.009 10 8 - 150 DFN3X3-8L
AM7330N SMD N 3.5 30 20 1 11 0.022 4.1 4 55 150 DFN3X3-8L
AM7402N SMD N 5 30 20 1 20 0.0085 10 6 156 150 DFN5X6-8L
AM7460N SMD N 5 60 20 1 12 0.026 9 6 85 150 DFN5X6-8L
AM7632N SMD N 2.5 30 20 1 12 0.013 10 6 156 150 DFN3X3-8PP
AM9410N SMD N 3.1 30 20 1 8.1 0.024 4 5 - 150 SO-8
AM9412N SMD N 3.1 30 20 1 9 0.022 4 5 - 150 SO-8
IRF7821GPBF SMD N 2.5 30 20 1 13.6 0.0091 9.3 2.7 360 155 SO-8
IRF7821PBF SMD N 2.5 30 20 1 13.6 0.0091 9.3 2.7 360 155 SO-8
IRF7821PBF-1 SMD N 2.5 30 20 1 13.6 0.0091 9.3 2.7 360 155 SO-8
IRF7828PBF SMD N 2.5 30 20 1 13.6 0.0125 9.2 2.7 360 150 SO-8
SQ2310ES SMD N 2 20 8 1 6 0.03 4.5 8 80 175 TO-236
SQ3460EV SMD N 3.6 20 8 1 8 0.03 9.3 8 117 175 TSOP-6
ST3400S23RG SMD N 2 30 12 1 5.8 0.028 9.7 10 240 150 SOT-23
STL6N3LLH6 SMD N 2.4 30 20 1 6 0.025 3.6 11.2 61 150 PowerFLAT2X2
STT6N3LLH6 SMD N 1.6 30 20 1 6 0.025 3.6 11.2 61 150 SOT-23