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Транзистор SSG6612N полевой MOSFET, его характеристики
Справочник электронных компонентов

Транзистор SSG6612N

SSG6612N - Транзистор полевой MOSFET структуры N

Основные характеристики:

Транзистор SSG6612N можно заменить на:

НАЗВАНИЕ ТИП СТР. Pd, Вт Vds, В Vgs, В Vgsth, В Id, А Rds, Ом Qg, нКл Tr, нС Ci, пФ Tj, гр.Ц КОРПУС
2SK4077-ZK SMD N 20 40 20 - 20 0.02 - 4 130 150 TO-252
AM7330N SMD N 3.5 30 20 1 11 0.022 4.1 4 55 150 DFN3X3-8L
AO4266 SMD N 3.1 60 20 2.5 10 0.015 - 2.5 123 150 SO-8
AO4468 SMD N 3.1 30 20 2.4 10.5 0.017 - 3.5 110 150 SO-8
AO4496 SMD N 3.1 30 20 2.5 10 0.0195 - 3.2 110 150 SO-8
AON7406 SMD N 15.5 30 20 2.4 25 0.017 - 3.5 110 150 DFN3X3
AON7408 SMD N 11 30 20 2.6 18 0.02 - 2.8 67 150 DFN3X3
AON7410 SMD N 20 30 20 2.5 24 0.02 - 3.2 110 150 DFN3X3
AON7414 SMD N 15.5 30 20 2.2 20 0.015 - 3.5 98 150 DFN3X3
AON7702B SMD N 23 30 20 2.5 20 0.0095 - 3 135 150 DFN3X3
AP4438GYT-HF SMD N 3.57 30 20 3 13.7 0.012 - 5 125 150 PMPAK3X3
CSD17579Q3A SMD N 3.2 30 20 1.9 11 0.0102 5.3 5 93 150 SON3.3X3.3
CSD18537NQ5A SMD N 3.2 60 20 3.5 11 0.013 14 4 136 150 SON5X6
MDV1526URH SMD N 3.4 30 20 2.7 13.2 0.011 - 3.9 139 150 PDFN33
MDV1527URH SMD N 3.4 30 20 2.7 11 0.0159 - 3.2 98 150 PDFN33
MDV1528 SMD N 3.4 30 20 - 16 0.0188 - 3.2 88 150 PDFN33
MDV1528URH SMD N 3.4 30 20 2.7 10.1 0.0188 - 3.2 88 150 PDFN33
MTN4800V8 SMD N 8 30 20 - 18 0.014 - 5 61 150 DFN3X3
QM4004S SMD N 3.47 40 20 2.5 13 0.012 10.7 3.4 120 150 SOP-8
RJK0355DPA SMD N 25 30 20 - 30 0.0107 - 4.1 165 150 WPAK
RJK0368DPA SMD N 25 30 20 - 20 0.0143 - 3.5 140 150 WPAK
RJK0397DPA SMD N 25 30 20 - 30 0.0101 - 4 160 150 WPAK
RJK03B9DPA SMD N 25 30 20 - 30 0.0106 - 4 160 150 WPAK
RJK03E2DNS SMD N 12.5 30 20 - 16 0.009 - 3.9 157 150 HWSON8
RJK03E3DNS SMD N 10 30 20 - 14 0.0116 - 3.8 108 150 HWSON8
SK840319L SMD N 19 30 20 3 10 0.01 6.3 3 160 150 HSSO8-F1-B
STL51N3LLH5 SMD N 4 30 22 2.5 12.6 0.0145 5 4.2 132 150 PowerFLAT5X6