Справочник электронных компонентов

Транзистор IRF7706

IRF7706 - Транзистор полевой MOSFET структуры P

Основные характеристики:

Транзистор IRF7706 можно заменить на:

НАЗВАНИЕ ТИП СТР. Pd, Вт Vds, В Vgs, В Vgsth, В Id, А Rds, Ом Qg, нКл Tr, нС Ci, пФ Tj, гр.Ц КОРПУС
AM4407 SMD P 3.2 30 20 2.5 12 0.015 21 35 320 150 SOP-8
AM4435 SMD P 2.8 30 20 2.5 9 0.021 16 17 350 150 SOP-8
IRF7706GPBF SMD P 1.51 30 20 2.5 7 0.022 48 46 339 150 TSSOP-8
IRF7706PBF SMD P 1.51 30 20 2.5 7 0.022 48 46 339 150 TSSOP-8
KRF7706 SMD P 1.51 30 20 2.5 7 0.022 48 46 339 150 TSSOP-8
NVMFS5113PL SMD P 3.8 60 20 2.5 10 0.014 45 37 505 175 DFN5X6
QM3003M3 SMD P 1.67 30 20 2.5 7.7 0.02 12.5 11.2 194 150 PRPAK3X3
QM3003S SMD P 1.5 30 20 2.5 7.5 0.02 12.6 14.8 194 150 SOP-8
QM3005M3 SMD P 1.67 30 20 2.5 9 0.014 22 73.7 310 150 PRPAK3X3
QM3005N3 SMD P 1.67 30 25 2.5 9 0.014 22 73.7 310 150 DFN3X3
QM3005S SMD P 1.5 30 25 2.5 8.2 0.015 21.8 9.6 310 150 SOP-8
QM3015S SMD P 1.5 30 20 2.5 10 0.0105 30 10.2 508 150 SOP-8
RSS075P03FU6TB SMD P 2 30 20 2.5 7.5 0.021 30 35 540 150 SOP-8
RSS075P03TB SMD P 2 30 20 2.5 7.5 0.021 30 35 540 150 SOP-8
RSS090P03FU6TB SMD P 2 30 20 2.5 9 0.014 39 50 750 150 SOP-8
RSS090P03TB SMD P 2 30 20 2.5 9 0.014 39 50 750 150 SOP-8
SM3305PSQA SMD P 3.1 30 25 2.5 13 0.012 31 15 315 150 DFN3X3-8
SM3305PSQG SMD P 3.1 30 25 2.5 13 0.012 31 15 315 150 DFN3X3-8
SM3307PSQA SMD P 3.1 30 25 2.5 11 0.018 21 12 210 150 DFN3X3-8
SM3307PSQG SMD P 3.1 30 25 2.5 11 0.018 21 12 210 150 DFN3X3-8
SQ4425EY SMD P 6.8 30 20 2.5 18 0.012 33.6 9 527 175 SO-8
SQ4435EY SMD P 6.8 30 20 2.5 15 0.018 38.3 9 392 175 SO-8
STP4407A SMD P 2.5 30 20 2.5 10 0.018 30 21 380 150 SOP-8
STP4435 SMD P 3.2 30 20 2.5 10 0.02 22 9.7 305 150 SOP-8
STS7PF30L SMD P 2.5 30 20 2.5 7 0.021 28 - - 150 SO-8